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FJX3904 NPN Epitaxial Silicon Transistor
January 2007
FJX3904
NPN Epitaxial Silicon Transistor
* General Purpose Transistor
3
2
SOT-323 1. Base 2. Emitter 3. Collector
1
Absolute Maximum Ratings* T =25C unless otherwise noted
a
Symbol
VCBO VCES VEBO IC PC TSTG
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature
Value
60 40 6 200 350 -55 ~ 150
Units
V V V mA mW C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics*
Symbol
BVCBO BVCEO BVEBO ICEX hFE
Ta = 25C unless otherwise noted
Parameter
Collector-Base Breakdown Voltage * Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current * DC Current Gain
Test Conditions
IC=10A, IE=0 IC=1mA, IB=0 IE=10A, IC=0 VCE=30V, VEB=3V VCE=1V, IC=0.1mA VCE=1V, IC=1mA VCE=1V, IC=10mA VCE=1V, IC=50mA VCE=1V, IC=100mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCB=5V, IE=0, f=1MHz VCE=20V, IC=10mA IC=100A, VCE=5V, RS=1K f=10Hz to 15.7KHz VCC=3V, VBE=0.5V IC=10mA, IB1=1mA VCC=3V, IC=10mA IB1=IB2=1mA
Min.
60 40 6
Max.
Units
V V V
50 40 70 100 60 30
nA
300
VCE(sat) VBE(sat) Cob fT NF tON tOFF
* Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Noise Figure Turn On Time Turn Off Time
0.2 0.3 0.65 0.85 0.95 4 300 5 70 250
V V V V pF MHz dB ns ns
* Pulse Test: Pulse Width 300s, Duty Cycle 2.0%
(c)2007 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FJX3904 Rev. B
FJX3904 NPN Epitaxial Silicon Transistor
Package Marking and Ordering Information
Device Item (note)
FJX3904TF
Device Marking
S1A
Package
SOT-323
Packing Method
TAPE & REEL
Qty(pcs)
3,000
Note : The Suffix "-TF" means Tape& Reel packing method, which can be on fairchildsemi website at http://www.fairchildsemi.com/packaging
Typical Performance Characteristics
240
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10
VCE = 1V
200
IC = 10 IB
hFE, DC CURRENT GAIN
160
1
VBE(sat)
120
80
0.1
VCE(sat)
40
0 0.1
1
10
100
0.01 0.1 1 10 100
IC[A], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
6
1000
5
IE = 0 f = 1MHz
fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT
VCE = 20V
Cob [pF], CAPACITANCE
4
3
100
2
1
0 1 10 100
10 0.1
1
10
100
VCB [V], COLLECTOR-BASE VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 3. Output Capacitance
Figure 4. Current Gain Bandwidth Product
2 FJX3904 Rev. B
www.fairchildsemi.com
FJX3904 NPN Epitaxial Silicon Transistor
Mechanical Dimensions
SOT-323
2.000.20
3
1.250.10
2.100.10
0.950.15
0.90 0.10
+0.05 0.05 -0.02 1.000.10 0.2750.100
1.300.10
3
+0.04 0.135 -0.01
0.10 Min
Dimensions in Millimeters
3 FJX3904 Rev. B
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FJX3904 NPN Epitaxial Silicon Transistor FJX3904 NPN Epitaxial Silicon Transistor
FAIRCHILD SEMICONDUCTOR TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In Design
Definition
This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I22
4 FJX3904 Rev. B
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